Diodes de signal au germanium a pain re nungsténe - Détection. Type Case VR lo VF IF IR VR IR VR Tamb D118 75. Boitier (V) (mA) (V) (mA) (14A) (V) (uA) (V).
Transistor - Wikipedia, the free encyclopedia
Packages in order from top to bottom: TO-3, TO-126, TO-92, SOT-23. A transistor is a semiconductor device used to amplify or switch electronic signals and electrical .. The first high-frequency transistor was the surface-barrier germanium ... Unlike IGFETs, the JFET gate forms a p–n diode with the channel which lies.
Diameter-Dependent Electronic Transport Properties of Au-Catalyst .
Mar 6, 2009 . at Au-catalyst/Ge-nanowire interfaces and subsequent transport . the total current density in a Schottky diode; this can ... 126, 11602 (2004).
diode au germanium 126,
OSA | Broadband antireflective germanium surfaces based on .
We fabricated the germanium (Ge) subwavelength structures (SWSs) using gold (Au) metallic nanopatterns dewetted by rapid thermal annealing and inductively.
Surface Chemistry and Electrical Properties of Germanium Nanowires
Aug 25, 2004 . Soc. , 2004, 126 (37), pp 11602–11611 . Scanning Tunneling Spectroscopy on InAs–GaSb Esaki Diode Nanowire Devices during Operation.